Review

Introduction

About Kingston Technology

Kingston Technology Company, Inc. is the world’s independent memory leader.

Founded in 1987 with a single product offering, Kingston® now offers more than 2,000 memory products that support nearly every device that uses memory, from computers, servers and printers to MP3 players, digital cameras and mobile phones. In 2010, the company’s sales reached $6.5 billion.

With global headquarters in Fountain Valley, California, Kingston employs more than 4,000 people worldwide. Regarded as one of the “Best Companies to Work for in America” by Fortune magazine, Kingston’s tenets of respect, loyalty, flexibility and integrity create an exemplary corporate culture. Kingston believes that investing in its people is essential, and each employee is a vital part of Kingston’s success.

Kingston serves an international network of distributors, resellers, retailers and OEM customers on six continents. The company also provides contract manufacturing and supply chain management services for semiconductor manufacturers and system OEMs.

The HyperX H20 are targeted at demanding gamers and the overclocking audience who love to tweak and push their systems to the limit. They are currently being sold in kits of 2000mhz and 2133mhz 4GB kits for AMD and Intel Core i3/i5 and a 2000mhz 6GB kit for Core i7 1366 slot configurations.

Higher memory speed is always an advantage when it comes to getting the most out of memory intensive applications such as video editing and compositing applications, 3D designing software, or even video games. Users working with overclocking also find a high demand for fast memory and try to push their kits even further than stock settings. To ensure that the memory is stable during high frequencies, there also needs to be a good cooling solution present. This is why Kingston decided to implement a water cooling solution on their new dual-channel HyperX H2O DDR3 4GB 2000MHz KHX2000C9AD3W1K2/4GX memory kit.



It’s your option to choose between water cooling or air cooling, and the HyperX H2O memory kit is designed to be used with or without water cooling, so the end-user does not have to limit their options to a full water cooling loop just because the memory was designed with a water cooled heatsink design.This is how the heat spreader works:

Kingston’s HyperX H20 KHX2000C9AD3W1K2/4GX is a kit of two 256M x64-bit 2GB (2048MB) memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components per module. The timing on this specific kit is 9-11-9-27 with a 1T command rate. The HyperX H2O kit also comes with two Intel XMP (Extreme Memory Profiles) enabling the user to switch between the possible DDR3-2000 and DDR3-2133 and one other lower specification depending on compatibility and stability of the motherboard, and processor. Because some locked processors may not have such a good memory compatibility, especially in the higher frequency ranges, the user can take advantage of the lower frequencies in the XMP.

FEATURES and Specifications:

  • JEDEC standard 1.5V ± 0.075V Power Supply
  • VDDQ = 1.5V ± 0.075V
  • 667MHz fCK for 1333Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 5,6,7,8,9,10
  • Posted CAS
  • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
  • Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
  • which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
  • Asynchronous Reset
  • PCB : Height 1.88” (48.00mm) w/ heatsink, double sided component

PERFORMANCE:

  • CL(IDD) 9 cycles
  • Row Cycle Time (tRCmin) 49.5ns (min.)
  • Refresh to Active/Refresh Command Time (tRFCmin) 110ns
  • Row Active Time (tRASmin) 36ns (min.)
  • Power 1.800 W (operating per module)
  • UL Rating 94 V – 0
  • Operating Temperature 0o C to 85o C
  • Storage Temperature -55o C to +100o C

Module Dimensions:

Module With Heatsink:

Cooling Tube Dimensions:

Memory Timings Explained

Memory timings can be very confusing, soim explaining them here before continuing on. Let’s start off with the numbers we usually see on a memory DIMM’s sticker: the timings. Memory timings are what ultimately decide how far a memory DIMM will overclock and perform. The lower number(s) the timings are, the better performance the memory modules will get. A 9-9-9-24 rated timing kit is a common timing on affordable DDR3 memory kits. Anything below those common timings will result in a higher price tag due to faster performance. So what do those numbers really mean? First, we need to explain what numbers relate and correspond to.

There are four main timings that heavily effect memory performance:
CAS Latency (tCL), RAS to CAS Delay (tRCD), Row Precharge Time (tRP), and RAS Active Time (tRAS).

For this explanation, we will use the Kingston HyperX KHX2133C9AD3W1K2/4GX DDR3 2133MHz memory module’s, 9-11-9-27 timings.

CAS Latency Time (tCL) 9-11-9-27

CAS stands for Column Address Strobe. Latency is the amount of time taken to respond. The lower the CAS Latency value, the faster the memory controller and modules communicate. The memory controller communicates with individual modules on the DIMM’s requesting data in cycles.

RAS to CAS Delay Time (tRCD) 9-11-9-27

RAS stands for Row Address Strobe and CAS stands for Column Address Strobe. The RAS to CAS Delay value is the amount of time in cycles it takes to perform a task requested by the memory controller.

Row Precharge Time (tRP) 9-11-9-27

The Row Precharge value is the amount of time in cycles needed for the Row Address Strobe (RAS) to collect before another row can be utilized. This acts almost like a queue in a sense.

RAS Active Time (tRAS) 9-11-9-27

RAS stands for Row Address Strobe. RAS Active Time is the amount of time (in cycles) between a row being occupied by Row Precharge (tRP) and unoccupied.

All timings are measured in nanoseconds (ns). The lower the value for each timing, the faster the memory modules can work together and report back whatever was requested from the memory controller/processor.

 
 






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